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TC58DVM82A1FT00 |
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| Part Number | TC58DVM82A1FT00 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | e e h S a at .D w w FEATURES w 2 TC58DVM82A1FT00 The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pag... |
| Features |
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TC58DVM82A1FT00
The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device uses single power supply (2.7 V to 3.6 V for VCC). The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes x 32 pages). The device is a serial-type memory device which utilizes the I/O pins for both... |
| Document |
 TC58DVM82A1FT00 Data Sheet
PDF 338.05KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC58DVM72A1FT00 |
Toshiba |
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
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| 2 | TC58DVM72F1FT00 |
Toshiba |
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
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| 3 | TC58DVM92A1FT0 |
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512M-Bit CMOS NAND EPROM |
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| 4 | TC58DVM92A1FT00 |
Toshiba |
512M-Bit CMOS NAND EPROM |
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| 5 | TC58DVM92A5TA00 |
Toshiba |
512M-BIT (64M x 8 BITS) CMOS NAND E2PROM |
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