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IRLL110 |
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| Part Number | IRLL110 |
| Manufacturer | International Rectifier |
| Description | Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 ... |
| Features |
ent, VGS @ 5.0 V Continuous Drain Current, VGS @ 5.0 V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldewring Temperature, for 10 seconds
Max.
1.5 0.93 12 3.1 2..0 0.025 0.017 -/+10 50 1.5 0.31 5.5 -55 to + 150
300 (1.6mm from case)
Units
A W
W/°C
VGS EAS IAR EAR dv/dt TJ, TSTG
V mJ A mJ V/ns
°C
Thermal Resistance
Parameter
RθJC RθJA J... |
| Document |
 IRLL110 Data Sheet
PDF 217.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRLL110 |
Vishay |
Power MOSFET |
|
| 2 | IRLL110PBF |
International Rectifier |
Power MOSFET |
|
| 3 | IRLL014 |
International Rectifier |
Power MOSFET |
|
| 4 | IRLL014 |
Vishay |
Power MOSFET |
|
| 5 | IRLL014N |
International Rectifier |
HEXFET Power MOSFET |
|