Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SK662 |
Click to view a larger image
| Part Number | 2SK662 |
| Manufacturer | Panasonic Semiconductor |
| Description | Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification unit: mm (0.425) I Features 0.3+0.1 –0.0 3 0.15+0.10 –0.05 G High mutual condu... |
| Features |
0.3+0.1 –0.0 3 0.15+0.10 –0.05 G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.25±0.10 2.1±0.1 5° 1 2 (0.65) (0.65) 1.3±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO ID IG PD Tj Tstg Ratings 30 −30 20 10 150 125 −55 to +125 Unit V V mA mA mW °C °C 2.0±0.2 10° 1: Source 2: Drain 3: Gate 0 to 0.1 0.9±0.1 0.... |
| Document |
 2SK662 Data Sheet
PDF 84.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK660 |
NEC |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR |
|
| 2 | 2SK662 |
Panasonic Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK663 |
Panasonic Semiconductor |
N-Channel MOSFET |
|
| 4 | 2SK663 |
Panasonic Semiconductor |
Silicon N-Channel Junction FET |
|
| 5 | 2SK664 |
Panasonic Semiconductor |
N-Channel MOSFET |
|