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MTP12N06EZL |
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| Part Number | MTP12N06EZL |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12N06EZL/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate This adva... |
| Features |
Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 Ω) Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 60 60 ± 15 ± 20 12 7.1 36 45 0.36 – 55 to 150 72 2.78 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C Designer’s Data for “Wors... |
| Document |
 MTP12N06EZL Data Sheet
PDF 222.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP12N05E |
Motorola |
POWER FIELD EFFECT TRANSISTOR |
|
| 2 | MTP12N10E |
Motorola |
TMOS POWER FET |
|
| 3 | MTP12N18 |
Fairchild Semiconductor |
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs |
|
| 4 | MTP12N20 |
Fairchild Semiconductor |
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs |
|
| 5 | MTP12P06 |
Motorola |
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR |
|