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MRF136 |
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| Part Number | MRF136 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136/D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–sig... |
| Features |
E 319B –02, STYLE 1 MRF136Y D MAXIMUM RATINGS Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ 2.5 55 0.314 Value MRF136 65 65 ± 40 5.0 100 0.571 MRF136Y 65 65 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C – 65 to +150 200 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max MRF136 3.2 MRF136Y 1.75 Unit °C/W Handling and Packaging — MOS devices are suscepti... |
| Document |
 MRF136 Data Sheet
PDF 284.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF134 |
Tyco Electronics |
N-CHANNEL MOS BROADBAND RF POWER FET |
|
| 2 | MRF134 |
Motorola |
N-CHANNEL MOS BROADBAND RF POWER FET |
|
| 3 | MRF136 |
MA-COM |
The RF MOSFET |
|
| 4 | MRF136 |
Tyco Electronics |
N-CHANNEL MOS BROADBAND RF POWER FET |
|
| 5 | MRF136 |
ASI |
RF POWER FIELD-EFFECT TRANSISTOR |
|