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MRF136 |
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| Part Number | MRF136 |
| Manufacturer | Tyco Electronics |
| Description | SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136/D The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal ampli... |
| Features |
PD Tstg TJ Value 65 65 ± 40 2.5 55 0.314 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 3.2 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain –Source Breakdown Voltage (VGS = 0, ID = 5.0 mA) Zero –Gate Voltage Drain Current (VDS = 2... |
| Document |
 MRF136 Data Sheet
PDF 340.22KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF134 |
Tyco Electronics |
N-CHANNEL MOS BROADBAND RF POWER FET |
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| 2 | MRF134 |
Motorola |
N-CHANNEL MOS BROADBAND RF POWER FET |
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| 3 | MRF136 |
MA-COM |
The RF MOSFET |
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| 4 | MRF136 |
Motorola |
N-CHANNEL MOS BROADBAND RF POWER FETs |
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| 5 | MRF136 |
ASI |
RF POWER FIELD-EFFECT TRANSISTOR |
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