IRFP054N |
Part Number | IRFP054N |
Manufacturer | Power MOSFET |
Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
Features |
Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
81 57 290 170 1.1 ± 20 360 43 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surf... |
Document |
IRFP054N Data Sheet
PDF 109.27KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP054 |
Power MOSFET |
Power MOSFET | |
2 | IRFP054 |
Vishay |
Power MOSFET | |
3 | IRFP054N |
INCHANGE |
N-Channel MOSFET | |
4 | IRFP054NPBF |
International Rectifier |
Power MOSFET | |
5 | IRFP054PBF |
INCHANGE |
N-Channel MOSFET |