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IRFM260 |
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| Part Number | IRFM260 |
| Manufacturer | International Rectifier |
| Description | Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1388A REPETITIVE AVALANCHE AND dv/dt RATED IRFM260 N-CHANNEL HEXFET ® TRANSISTOR 200Volt, 0.060Ω , HEXFET HEXFET techno... |
| Features |
n n n n n
Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelet
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
Pre-Radiation
IRFM260
3... |
| Document |
 IRFM260 Data Sheet
PDF 442.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFM210A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 2 | IRFM210B |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 3 | IRFM214B |
Fairchild Semiconductor |
250V N-Channel MOSFET |
|
| 4 | IRFM220A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 5 | IRFM220B |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|