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IRFM110A |
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| Part Number | IRFM110A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.)
IRFM110A
BVDSS = 100 V RDS(on) = 0.4 Ω ID = 1.5 A
SOT-223
2 1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C ) Continuous Drain Current (TA=70 C )
Ο Ο
Value 100 1.5 1.19
1 O
Units V A A V mJ A mJ V/ns W W/ C
Ο
Drain Current-Pulsed Gate-to-Source... |
| Document |
 IRFM110A Data Sheet
PDF 263.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFM120A |
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IEEE802.3af Compatible |
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| 2 | IRFM1310ST |
Seme LAB |
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| 3 | IRFM140 |
International Rectifier |
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| 4 | IRFM150 |
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| 5 | IRFM014A |
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