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IRFM120A |
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| Part Number | IRFM120A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES IRFM120A BVDSS = 100 V RDS(on) = 0.2 ! ID = 2.3 A SOT-223 2 IEEE802.3af Compatible ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacita... |
| Features |
IRFM120A
BVDSS = 100 V RDS(on) = 0.2 ! ID = 2.3 A
SOT-223
2
IEEE802.3af Compatible
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V ! Lower RDS(ON) : 0.155 ! (Typ.)
1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25%) Continuous Drain Current (TA=70%) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanc... |
| Document |
 IRFM120A Data Sheet
PDF 269.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFM110A |
Fairchild Semiconductor |
Advanced Power MOSFET |
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| 2 | IRFM1310ST |
Seme LAB |
N-CHANNEL POWER MOSFET |
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| 3 | IRFM140 |
International Rectifier |
HEXFET TRANSISTOR |
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| 4 | IRFM150 |
Seme LAB |
N-CHANNEL POWER MOSFET |
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| 5 | IRFM014A |
Samsung |
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