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Features
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W W W . Microsemi . COM
This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance. These transistors are intended for Class A, B, or C amplifier, oscillator or frequency multiplier circuits and are specifically designed for operation in the VHF-UHF region.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi...
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SD1070 Data Sheet
