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K4H560838F-UCCC |
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| Part Number | K4H560838F-UCCC |
| Manufacturer | Samsung semiconductor |
| Description | DDR SDRAM 16Mb x 16 32Mb x 8 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ N... |
| Features |
• 200MHz Clock, 400Mbps data rate. • VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333 -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) • All inputs except data & DM are sampled at the positive going edge of the system clock(CK) • Data I/O transactions on both edges of data s... |
| Document |
 K4H560838F-UCCC Data Sheet
PDF 171.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4H560838F-UCC4 |
Samsung semiconductor |
256Mb F-die DDR400 SDRAM |
|
| 2 | K4H560838F-TC |
Samsung Semiconductor |
DDR SDRAM 256Mb F-die |
|
| 3 | K4H560838F-TCC4 |
Samsung semiconductor |
256Mb F-die DDR400 SDRAM Specification |
|
| 4 | K4H560838F-TCCC |
Samsung semiconductor |
256Mb F-die DDR400 SDRAM Specification |
|
| 5 | K4H560838A-TCA0 |
Samsung |
128Mb DDR SDRAM |
|