M464S3254ETS |
Part Number | M464S3254ETS |
Manufacturer | Samsung semiconductor |
Description | Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 CLK0 ~ CLK1 CKE0 ~ CKE1 CS0 ~ CS1 RAS CAS Select bank Data input/output Clock input Clock enable input Chip select input Row address strobe Column address strobe... |
Features |
ge 54-TSOP(II) 54-sTSOP(II)
SDRAM
Height 1,000mil 1,250mil 1,250mil
Operating Frequencies
7A @CL3 Maximum Clock Frequency CL-tRCD-tRP(clock) 133MHz(7.5ns) 3-3-3 @CL2 100MHz(10ns) 2-2-2
Feature
• Burst mode operation • Auto & self refresh capability (8192 Cycles/64ms) • LVTTL compatible inputs and outputs • Single 3.3V ± 0.3V power supply • MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Serial presence detect with E... |
Document |
M464S3254ETS Data Sheet
PDF 268.98KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | M464S3254DTS |
Samsung semiconductor |
32Mx64 SDRAM SODIMM based on 16Mx16 / 4Banks / 8K Refresh / 3.3V Synchronous DRAMs with SPD | |
2 | M464S3354BTS |
Samsung semiconductor |
SDRAM Unbuffered SODIMM | |
3 | M464S3354BTS |
Samsung |
SDRAM Unbuffered SODIMM | |
4 | M464S0824DT1 |
Samsung semiconductor |
8Mx64 SDRAM SODIMM based on 4Mx16 | |
5 | M464S0924CT1 |
Samsung semiconductor |
8Mx64 SDRAM SODIMM based on 8Mx16 |