FQA9N90C |
Part Number | FQA9N90C |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • 9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA9N90C 900 9.0 5.7 36.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Si... |
Document |
FQA9N90C Data Sheet
PDF 680.52KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQA9N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
2 | FQA9N90-F109 |
ON Semiconductor |
N-Channel MOSFET | |
3 | FQA9N90C-F109 |
ON Semiconductor |
N-Channel QFET MOSFET | |
4 | FQA9N90C_F109 |
Fairchild Semiconductor |
MOSFET | |
5 | FQA9N90_F109 |
Fairchild Semiconductor |
N-Channel QFET MOSFET |