IRFP450LC |
Part Number | IRFP450LC |
Manufacturer | International Rectifier |
Description | This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gat... |
Features |
TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max. 14 8.6 56 190 1.5 ±30 760 14 19 3.5
-55 to + 150
300 (1.6mm from case) 10 lbf •in (1.1N •m) Units A W W/°C V mJ A mJ V/ns °C T... |
Document |
IRFP450LC Data Sheet
PDF 159.12KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP450LC |
Vishay Siliconix |
Power MOSFET | |
2 | IRFP450 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | IRFP450 |
International Rectifier |
Power MOSFET | |
4 | IRFP450 |
Intersil Corporation |
N-Channel Power MOSFET | |
5 | IRFP450 |
ST Microelectronics |
N-Channel Power MOSFET |