STD1NB60 |
Part Number | STD1NB60 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
Features |
( 1 ) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 600 600 ± 30 1 0.63 4 45 0.36 3.5 -65 to 150 150
( 1) ISD ≤1 Α, di/dt â 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C 1/6
( •) Pulse width limited by safe operating area November 1999 STD1NB60 THE... |
Document |
STD1NB60 Data Sheet
PDF 66.79KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD1NB50 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STD1NB80 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STD1NB80-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STD1NA60 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STD1NC40-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |