STD1NB60 ST Microelectronics N-CHANNEL POWER MOSFET Datasheet, en stock, prix

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STD1NB60

ST Microelectronics
STD1NB60
STD1NB60 STD1NB60
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Part Number STD1NB60
Manufacturer STMicroelectronics (https://www.st.com/)
Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with...
Features ( 1 ) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 600 600 ± 30 1 0.63 4 45 0.36 3.5 -65 to 150 150 ( 1) ISD ≤1 Α, di/dt â 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/6 (
•) Pulse width limited by safe operating area November 1999 STD1NB60 THE...

Document Datasheet STD1NB60 Data Sheet
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