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IRHM2C50SE |
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| Part Number | IRHM2C50SE |
| Manufacturer | IRF |
| Description | Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1252B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR ® IRHM2C50SE IRHM7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE)... |
| Features |
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings
Parameter
I D @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25°C Max. Power Dis... |
| Document |
 IRHM2C50SE Data Sheet
PDF 134.38KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRHM3054 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
|
| 2 | IRHM3130 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
|
| 3 | IRHM3150 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
|
| 4 | IRHM3250 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
|
| 5 | IRHM3260 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
|