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IRFS730B |
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| Part Number | IRFS730B |
| Manufacturer | Fairchild |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
| Features |
• • • • • • 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF730B 400 5.5 3.5 22 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS730B 5.5 * 3.5 * 22 * 330 5.5 7.3 5.5 Units V A A ... |
| Document |
 IRFS730B Data Sheet
PDF 898.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFS730 |
LZG |
N-Channel MOSFET |
|
| 2 | IRFS730 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 3 | IRFS730A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | IRFS730A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 5 | IRFS710A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|