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STP9NB50 |
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| Part Number | STP9NB50 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
t (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value STP9NB50 500 500 ±30 8.6 5.4 34.4 125 1 4.5 –65 to 150 150 (1)ISD<9A, di/dt<200A/µ, VDD |
| Document |
 STP9NB50 Data Sheet
PDF 108.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP9NB50FP |
ST Microelectronics |
PowerMesh MOSFET |
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| 2 | STP9NB60 |
ST Microelectronics |
PowerMesh MOSFET |
|
| 3 | STP9N60M2 |
STMicroelectronics |
N-channel Power MOSFET |
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| 4 | STP9N65M2 |
STMicroelectronics |
N-channel Power MOSFET |
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| 5 | STP9N80K5 |
STMicroelectronics |
N-channel Power MOSFET |
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