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STP55NE06 |
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| Part Number | STP55NE06 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged ... |
| Features |
urce Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor V ISO dv/dt T stg Tj Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Uni t
STP55NE06FP 60 60 ± 20 V V V 30 21 220 35 0.27 2000 7 A A A W W/ C V V/ ns
o o o
55 39 220 130 0.96
-65 to 175 175
( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
C C 1/9
( •) Pulse width limited by safe operating area January 1998 STP55NE06/FP THERMAL ... |
| Document |
 STP55NE06 Data Sheet
PDF 120.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP55NE06FP |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
|
| 2 | STP55NE06L |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
|
| 3 | STP55N06L |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
|
| 4 | STP55N06LFI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
|
| 5 | STP55NF03L |
ST Microelectronics |
N-Channel MOSFET |
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