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SPB21N50C3 |
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| Part Number | SPB21N50C3 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved tr... |
| Features |
ain Source voltage slope
VDS = 400 V, ID = 16 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, reflow soldering, MSL1 1.6 mm (0.063 in.) from case for 10s3)
Symbol
RthJC RthJC_FP RthJA RthJA FP Tsold
Values
min. typ. max.
-
- 0.78
-
-
3.7
-
-
62
-
-
80
-
- 260
Unit K/W
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Paramet... |
| Document |
 SPB21N50C3 Data Sheet
PDF 1.32MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB21N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | SPB21N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 3 | SPB21N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 4 | SPB200UFA |
VMI |
(SPBxx0UFA) Single Phase Bridge |
|
| 5 | SPB200UFB |
VMI |
(SPBxx0UFB) Single Phase Bridge |
|