BAW79C |
Part Number | BAW79C |
Manufacturer | Siemens Group |
Description | Silicon Switching Diodes BAW 79 A … BAW 79 D For high-speed switching q High breakdown voltage q Common cathode q Type BAW 79 A BAW 79 B BAW 79 C BAW 79 D Marking GE GF GG GH Ordering Code (tape ... |
Features |
cified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA BAW 79 A BAW 79 B BAW 79 C BAW 79 D Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VRmax VR = VRmax, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA Test circuit for reverse recovery time CD trr – – 10 1 – – pF µs Values typ. max. Unit V(BR) 50 100 200 400 VF – – IR – – – – 1 50 – – 1.6 2 – – – – – – – – V V µA Pulse generator: tp = 5 µs, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω ... |
Document |
BAW79C Data Sheet
PDF 86.33KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAW79 |
Infineon Technologies AG |
Silicon Switching Diodes | |
2 | BAW79A |
Siemens Group |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) | |
3 | BAW79A |
Infineon Technologies AG |
Silicon Switching Diodes | |
4 | BAW79B |
Siemens Group |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) | |
5 | BAW79B |
Infineon Technologies AG |
Silicon Switching Diodes |