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Features
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.9 60 10
2N2412 MIN MAX
10 10 10 25 15 0.7 20 40 20 1.4 5.0 8.0 0.2 0.9 120 20
UNITS
nA µA µA V V V V
pF pF
(CONTINUED ON REVERSE SIDE) R0
2N2411 / 2N2412 ELECTRICAL CHARACTERISTICS (Continued) SYMBOL
td tr ton ts tf toff
PNP SILICON TRANSISTOR
TEST CONDITIONS
VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω
2N2411 MIN MAX
10 20 25 90 20 100
2N2412 MIN MAX
10 20 25 90 20 100
UNITS
ns ns ns ...
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2N2411 Data Sheet
