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SFH483 |
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| Part Number | SFH483 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Vorwärtsgleichstrom, TC ≤ 25 °C Forward current Stoßstro... |
| Features |
Highly efficient GaAlAs LED Anode is electrically connected to the case High pulse power High reliability DIN humidity category in acc. with DIN 40040 GQG q Same package as BPX 63, BP 103, LD 242, SFH 464
q q q q q
Applications q IR remote controls and sound transmission q Photointerrupter
Gehäuse Package 18 A3 DIN 41870 (TO-18), Bodenplatte, klares EpoxyGießharz, Anschlüsse im 2.54-mm-Raster (1/10’’) 18 A3 DIN 41870 (TO-18), clear epoxy resin, lead spacing 2.54 mm (1/10’’)
Semiconductor Group
1
1997-11-01
fet06625
SFH 483
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- un... |
| Document |
 SFH483 Data Sheet
PDF 34.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SFH480 |
Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm |
|
| 2 | SFH481 |
Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm |
|
| 3 | SFH482 |
Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm |
|
| 4 | SFH483 |
OSRAM |
GaAlAs Infrared Emitter |
|
| 5 | SFH483E7800 |
OSRAM |
GaAlAs Infrared Emitter |
|