Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
P121 |
Click to view a larger image
| Part Number | P121 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an... |
| Features |
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T C= 25 C )
Total Device Dissipation 10 Watts Junction to Case Thermal Resistance o 15.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30 V
0.8 A
RF... |
| Document |
 P121 Data Sheet
PDF 32.87KB |
| Distributor | Stock | Price | Buy |
|---|
