NDS9959 |
Part Number | NDS9959 |
Manufacturer | Fairchild |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to... |
Features |
2.0A, 50V. RDS(ON) = 0.3Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
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5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage
T A = 25°C unless otherwise noted
NDS9959 50 ± 20
(Note 1a) (Note 1a)
Units V V A
Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 70°C - Pulsed @ TA = 25°C
± 2.0 ± 1.6 ±8 2
P... |
Document |
NDS9959 Data Sheet
PDF 340.08KB |
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