NDS9953A |
Part Number | NDS9953A |
Manufacturer | Fairchild |
Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to... |
Features |
-2.9A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
________________________________________________________________________________
5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A= 25°C unless otherwise noted
NDS9953A -30 ± 20
(Note 1a)
Units V V A
± 2.9 ± 10 2
Power Dissipation for Dual Operation Power Dissipation ... |
Document |
NDS9953A Data Sheet
PDF 342.69KB |
Distributor | Stock | Price | Buy |
---|