NDS9947 |
Part Number | NDS9947 |
Manufacturer | Fairchild |
Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to... |
Features |
-3.5A, -20V. RDS(ON) = 0.1Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
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5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
T A = 25°C unless otherwise noted
NDS9947 -20 ± 20 TA = 25°C TA = 25°C
(Note 1a) (Note 1a)
Units V V A
- Continuous
± 3.5 ± 2.5 ± 10 2
- Continuous TA = 70°C - Pulsed P... |
Document |
NDS9947 Data Sheet
PDF 342.32KB |
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