NDS9945 |
Part Number | NDS9945 |
Manufacturer | Fairchild |
Description | SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to ... |
Features |
3.5 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.200 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
5 6 G2 7 8
4 3 2 1
S ND 45 99
S2 G1
SO-8
pin 1
S1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25oC unless other wise noted NDS9945 60 ±20
(Note 1a)
Units V V A
3.5 10 2
... |
Document |
NDS9945 Data Sheet
PDF 209.46KB |
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