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NDS8958 |
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| Part Number | NDS8958 |
| Manufacturer | Fairchild |
| Description | These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially... |
| Features |
N-Channel 5.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V.
P-Channel -4.0A, -30V, RDS(ON)=0.065Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package.
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5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A= 25°C unless otherwise noted
N-Channel 30 20
(Note 1a)
P-Channel -30 -... |
| Document |
 NDS8958 Data Sheet
PDF 354.64KB |
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