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NDS8852H |
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| Part Number | NDS8852H |
| Manufacturer | Fairchild |
| Description | These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-stat... |
| Features |
N-Channel 4.3A, 30V, RDS(ON)=0.08Ω @ VGS=10V. P-Channel -3.4A, -30V, RDS(ON)=0.13Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability .
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V+
P-Gate
Vout Vout Vout
N -Gate
Vout
V-
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Single Device) ... |
| Document |
 NDS8852H Data Sheet
PDF 349.57KB |
| Distributor | Stock | Price | Buy |
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