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NDS356P |
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| Part Number | NDS356P |
| Manufacturer | Fairchild |
| Description | These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially... |
| Features |
-1.1 A, -20V. RDS(ON) = 0.3Ω @ VGS = -4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package.
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D
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage
T A = 25°C unless otherwise noted
NDS356P -20 ± 12
(Note 1a)
Units V V A
Gate-Source Voltage - Continuou... |
| Document |
 NDS356P Data Sheet
PDF 78.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDS356AP |
Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | NDS351AN |
Fairchild |
N-Channel MOSFET |
|
| 3 | NDS351AN |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | NDS351N |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | NDS352AP |
Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|