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NDS352AP |
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| Part Number | NDS352AP |
| Manufacturer | Fairchild |
| Description | These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especiall... |
| Features |
-0.9 A, -30 V. RDS(ON) = 0.5 Ω @ VGS = -4.5 V RDS(ON) = 0.3 Ω @ VGS = -10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
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D
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage
T A = 25°C unless otherwise noted
NDS352AP -30 ±20
(Note 1a)
Units V V A
Gate-Source Voltage - ... |
| Document |
 NDS352AP Data Sheet
PDF 78.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDS352P |
Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | NDS351AN |
Fairchild |
N-Channel MOSFET |
|
| 3 | NDS351AN |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | NDS351N |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | NDS355AN |
ON Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|