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NDS336P |
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| Part Number | NDS336P |
| Manufacturer | Fairchild |
| Description | SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is esp... |
| Features |
-1.2 A, -20 V, RDS(ON) = 0.27 Ω @ VGS= -2.7 V RDS(ON) = 0.2 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface package. Mount
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Symbol VDSS VGSS ID PD TJ,TSTG Paramet... |
| Document |
 NDS336P Data Sheet
PDF 77.51KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDS331N |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | NDS332P |
Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | NDS335N |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | NDS351AN |
Fairchild |
N-Channel MOSFET |
|
| 5 | NDS351AN |
ON Semiconductor |
N-Channel MOSFET |
|