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NDS335N |
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| Part Number | NDS335N |
| Manufacturer | Fairchild |
| Description | These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especiall... |
| Features |
1.7 A, 20 V. RDS(ON) = 0.14 Ω @ VGS= 2.7 V RDS(ON) = 0.11 Ω @ VGS= 4.5 V. Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
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D
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage
T A = 25°C unless otherwise noted
NDS335N 20 8 1.7 10
(Note 1a) (Note 1b)
Units V V A W
... |
| Document |
 NDS335N Data Sheet
PDF 59.51KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDS331N |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | NDS332P |
Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | NDS336P |
Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | NDS351AN |
Fairchild |
N-Channel MOSFET |
|
| 5 | NDS351AN |
ON Semiconductor |
N-Channel MOSFET |
|