NDH8303N |
Part Number | NDH8303N |
Manufacturer | Fairchild |
Description | SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tail... |
Features |
3.8 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.045 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
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5 6 7 8
4 3 2 1
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maxim... |
Document |
NDH8303N Data Sheet
PDF 72.45KB |
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