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NDH8301N |
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| Part Number | NDH8301N |
| Manufacturer | Fairchild |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to... |
| Features |
3 A, 20 V. RDS(ON) = 0.06 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
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4 3 2
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7 8
Absolute Maximum Ratings T A = 25°C unless otherwise note
Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum ... |
| Document |
 NDH8301N Data Sheet
PDF 211.77KB |
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