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MMBV105GLT1 |
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| Part Number | MMBV105GLT1 |
| Manufacturer | ON |
| Description | ON Semiconductort Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement o... |
| Features |
yp 250 Min 4.0
CR C3/C25 f = 1.0 MHz Max 6.5
MMBV105GLT1
1.5
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 2 Publication Order Number: MMBV105GLT1/D MMBV105GLT1 TYPICAL CHARACTERISTICS 20 18 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 10 10 100 f, FREQUENCY (MHz) 1000 f = 1.0 MHz TA = 25°C VR = 3 Vdc TA = 25°C 100 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Meri... |
| Document |
 MMBV105GLT1 Data Sheet
PDF 37.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBV105GLT1 |
Motorola |
Silicon Tuning Diode |
|
| 2 | MMBV105GLT1 |
Leshan Radio Company |
Silicon Tuning Diode |
|
| 3 | MMBV105G |
Motorola |
VOLTAGE VARIABLE CAPACITANCE DIODE |
|
| 4 | MMBV109 |
Motorola |
VOLTAGE VARIABLE CAPACITANCE DIODE |
|
| 5 | MMBV109LT1 |
Motorola |
Silicon Epicap Diodes |
|