MMBD353LT1 |
Part Number | MMBD353LT1 |
Manufacturer | ON |
Description | www.DataSheet4U.com MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detec... |
Features |
1 2
http://onsemi.com
3
SOT−23 (TO−236) CASE 318
• Very Low Capacitance − Less Than 1.0 pF @ Zero V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • Pb−Free Packages are Available MAXIMUM RATINGS (EACH DIODE) Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 1 ANODE 3 CATHODE/ANODE MMBD352LT1 STYLE 11 2 CATHODE 1 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance,... |
Document |
MMBD353LT1 Data Sheet
PDF 119.68KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MMBD353LT1 |
Leshan Radio Company |
Dual Hot Carrier Mixer Diodes | |
2 | MMBD353LT1 |
Motorola |
(MMBD35xLT1) Dual Hot Carrier Mixer Diodes | |
3 | MMBD353LT1G |
ON Semiconductor |
Dual Hot Carrier Mixer Diodes | |
4 | MMBD353 |
Won-Top Electronics |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
5 | MMBD353 |
GME |
Dual Hot Carrier Mixer Diodes |