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MLD1N06CL |
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| Part Number | MLD1N06CL |
| Manufacturer | Motorola |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MLD1N06CL/D ™ Data Sheet SMARTDISCRETES ™ Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET The MLD1N06C... |
| Features |
current limiting for short circuit protection, integrated Gate –Source clamping for ESD protection and integral Gate –Drain clamping for over –voltage protection and Sensefet technology for low on –resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate –Source and Gate –Drain clamps allow the device to be applied without use of external transient suppression components. The Gate –Source clamp protects the MOSFET input from electrostatic voltage stress ... |
| Document |
 MLD1N06CL Data Sheet
PDF 163.14KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MLD1N06CL |
ON Semiconductor |
Power MOSFET |
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| 2 | MLD2016S1R0MTD25 |
TDK |
INDUCTORS |
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| 3 | MLD2016S1R5MTD25 |
TDK |
INDUCTORS |
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| 4 | MLD2016S2R2MTD25 |
TDK |
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| 5 | MLD2016S3R3MTD25 |
TDK |
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