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Features
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JD29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 125mA VCE = 4A, IC = 1A VCE = 10V, IC = 200mA 3 40 15 20 20 1 75 0.7 1.3 V V MHz µA µA mA VCE = 40V, IB = 0 VCE = 60V, IB = 0 50 50 µA µA Test Condition IC = 30mA, IB = 0 Min. 40 100 Max. Units V V
ICEO
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD29/29C
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MJD29 Data Sheet
