M368L6423FTN-CB3B0 Sanken electric DDR SDRAM Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

M368L6423FTN-CB3B0

Sanken electric
M368L6423FTN-CB3B0
M368L6423FTN-CB3B0 M368L6423FTN-CB3B0
zoom Click to view a larger image
Part Number M368L6423FTN-CB3B0
Manufacturer Sanken (https://www.sanken-ele.co.jp/) electric
Description Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 DQS0 ~ DQS8 CK0,CK0 ~ CK2, CK2 CKE0, CKE1(for double banks) CS0, CS1(for double banks) RAS CAS WE CB0 ~ CB7 (for x72 module) Function Address input (Multiplexed)...
Features perating Frequencies B3(DDR333@CL=2.5) Speed @CL2 Speed @CL2.5 CL-tRCD-tRP 133MHz 166MHz 2.5-3-3 AA(DDR266@CL=2) 133MHz 133MHz 2-2-2 A2(DDR266@CL=2) 133MHz 133MHz 2-3-3 B0(DDR266@CL=2.5) 100MHz 133MHz 2.5-3-3 Feature
• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
•...

Document Datasheet M368L6423FTN-CB3B0 Data Sheet
PDF 445.42KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 M368L6423FTN
Sanken electric
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC Datasheet
2 M368L6423ETN-A2
Samsung
DDR SDRAM Unbuffered Module Datasheet
3 M368L6423ETN-AA
Samsung
DDR SDRAM Unbuffered Module Datasheet
4 M368L6423ETN-B0
Samsung
DDR SDRAM Unbuffered Module Datasheet
5 M368L6423ETN-CB3
Samsung
DDR SDRAM Unbuffered Module Datasheet
More datasheet from Sanken electric



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact