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PHP21N06T |
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| Part Number | PHP21N06T |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes ... |
| Features |
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHP21N06T
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 21 69 175 75 UNIT V A W ˚C mΩ
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Max... |
| Document |
 PHP21N06T Data Sheet
PDF 65.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHP21N06 |
NXP |
TrenchMOSO transistor Standard level FET |
|
| 2 | PHP21N06 |
NXP |
N-channel TrenchMOS transistor Logic level FET |
|
| 3 | PHP21N06LT |
NXP |
N-channel TrenchMOS transistor Logic level FET |
|
| 4 | PHP212 |
NXP |
Dual P-channel enhancement mode MOS transistor |
|
| 5 | PHP212L |
NXP |
Dual P-channel enhancement mode MOS transistor |
|