PHD3N20L |
Part Number | PHD3N20L |
Manufacturer | NXP (https://www.nxp.com/) |
Description | N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switc... |
Features |
n current Total dissipation Linear derating factor Gate-source voltage Non-repetitive gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C tp ≤ 50 µs VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 5 V VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 5 V MIN. - 55 MAX. 3.5 2.5 14 50 0.33 ± 15 ± 20 25 3.5 175 UNIT A A A W W/K V V mJ A ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mountin... |
Document |
PHD3N20L Data Sheet
PDF 56.86KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHD3N20E |
NXP |
PowerMOS transistor | |
2 | PHD3N40E |
NXP |
N-Channel MOSFET | |
3 | PHD3055E |
NXP |
Transistor | |
4 | PHD3055L |
NXP |
PowerMOS transistor Logic level FET | |
5 | PHD34NQ10T |
NXP |
N-channel TrenchMOS transistor |