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K4M511633E |
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| Part Number | K4M511633E |
| Manufacturer | Samsung |
| Description | The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design al... |
| Features |
• 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • Comme... |
| Document |
 K4M511633E Data Sheet
PDF 112.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4M511633C |
Samsung semiconductor |
8M x 16Bit x 4 Banks Mobile SDRAM |
|
| 2 | K4M511633E-C |
Samsung |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|
| 3 | K4M511633E-F1H |
Samsung |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|
| 4 | K4M511633E-F1L |
Samsung |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|
| 5 | K4M511633E-F75 |
Samsung |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|