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K1S161611A-I |
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| Part Number | K1S161611A-I |
| Manufacturer | Samsung |
| Description | The K1S161611A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibilit... |
| Features |
• • • • • • UtRAM GENERAL DESCRIPTION The K1S161611A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Technology: CMOS Organization: 1M x16 bit Power Supply Voltage: 2.7V~3.1V Three State Outputs Compatible with Low Power SRAM Dual Chip selection support • Package Type: 48-FBGA-6.00x7.00 PRODUCT FAMILY Power Dissipation Product Family Operating Temp. Vcc Range Spee... |
| Document |
 K1S161611A-I Data Sheet
PDF 179.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K1S161611A |
Samsung |
1Mx16 bit Uni-Transistor Random Access Memory |
|
| 2 | K1S16161CA |
Samsung |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
|
| 3 | K1S16161CA |
Samsung |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
|
| 4 | K1S16161CA-I |
Samsung |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
|
| 5 | K1S16161CA-I |
Samsung |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
|