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HYB514256BJL-60 |
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| Part Number | HYB514256BJL-60 |
| Manufacturer | Siemens |
| Description | DRAM (access time 50ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) D... |
| Features |
include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. These HYB 514256BL/BJL are specially selected for battery backup applications. Pin Definitions and Functions Pin No. A0-A8 RAS OE I/O1-I/O4 CAS WE Function Address Inputs Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) No Connection
VCC VSS
N.C.
Semiconductor Group
56
HYB 514256B/BL/BJ/BJL-50/-60/-70 256 K × 4-DRAM
Pin Configuration (top view)
P-SOJ-26/20-1
P-DIP-20-2
Semiconductor Gr... |
| Document |
 HYB514256BJL-60 Data Sheet
PDF 215.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HYB514256BJL-50 |
Siemens |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
|
| 2 | HYB514256BJL-70 |
Siemens |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
|
| 3 | HYB514256BJ-50 |
Siemens |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
|
| 4 | HYB514256BJ-60 |
Siemens |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
|
| 5 | HYB514256BJ-70 |
Siemens |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
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