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UPA812T |
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| Part Number | UPA812T |
| Manufacturer | NEC |
| Description | PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4227) SMALL MINI MOLD The µPA812T has built-in 2 low-volt... |
| Features |
• Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA 0.65 0.65 • High Gain 1.3 |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC4227) 2.0±0.2 2 3 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to perforation side of the tape. 0.9±0.1 µPA812T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is... |
| Document |
 UPA812T Data Sheet
PDF 50.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | UPA810T |
CEL |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 2 | UPA810TC |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 3 | UPA811T |
NEC |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
|
| 4 | UPA813T |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 5 | UPA814T |
CEL |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|