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Q62702-C2517 |
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| Part Number | Q62702-C2517 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BCP 72M PNP Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation volt... |
| Features |
specified. Symbol Values Parameter
Unit max. 100 20 100 nA µA nA V
min. DC Characteristics Collector-emitter breakdown voltage
typ. -
V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE
10 10 5 -
I C = 10 mA, I B = 0
Collector-base breakdown voltage
I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 8 V, IE = 0
Collector cutoff current
VCB = 8 V, IE = 0 , T A = 150 °C
Emitter cutoff current
VEB = 4 V, I C = 0
DC current gain 1)
I C = 10 mA, VCE = 5 V I C = 500 mA, V CE = 1 V I C = 2 A, VCE = 2 V
Collector-emitter saturation voltage1)
... |
| Document |
 Q62702-C2517 Data Sheet
PDF 30.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-C25 |
Siemens Semiconductor Group |
NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
|
| 2 | Q62702-C252 |
Siemens Semiconductor Group |
PNP SILICON TRANSISTORS |
|
| 3 | Q62702-C2529 |
Siemens Semiconductor Group |
NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain) |
|
| 4 | Q62702-C2532 |
Siemens Semiconductor Group |
PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
|
| 5 | Q62702-C2537 |
Siemens Semiconductor Group |
NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain) |
|