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Q62702-C2127 |
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| Part Number | Q62702-C2127 |
| Manufacturer | Siemens Semiconductor Group |
| Description | NPN Silicon AF Transistor q q q q q BCP 68 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 69 (PNP) Type BCP 68 ... |
| Features |
1.5 mm/6 cm2 Cu.
Semiconductor Group
1
01.97
BCP 68
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IB = 0 Collector-base cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V V(BR)CE0 V(BR)CES V(BR)CB0 V(BR)EB0 ICB0 – – ... |
| Document |
 Q62702-C2127 Data Sheet
PDF 136.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-C2120 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
| 2 | Q62702-C2122 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
| 3 | Q62702-C2123 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
| 4 | Q62702-C2125 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
| 5 | Q62702-C2126 |
Siemens Semiconductor Group |
NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
|